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Brand Name : onsemi
Model Number : NDS0610
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 60 V
Current - Continuous Drain (Id) @ 25°C : 120mA (Ta)
Rds On (Max) @ Id, Vgs : 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.5 nC @ 10 V
Vgs (Max) : ±20V
|   			 FET Type   			 |   			  			 |   		|
|   			 Technology   			 |   			  			 MOSFET (Metal Oxide)   			 |   			  			 |   		
|   			 Drain to Source Voltage (Vdss)   			 |   			  			 |   		|
|   			 Current - Continuous Drain (Id) @ 25°C   			 |   			  			 |   		|
|   			 Drive Voltage (Max Rds On, Min Rds On)   			 |   			  			 4.5V, 10V   			 |   			  			 |   		
|   			 Rds On (Max) @ Id, Vgs   			 |   			  			 10Ohm @ 500mA, 10V   			 |   			  			 |   		
|   			 Vgs(th) (Max) @ Id   			 |   			  			 3.5V @ 1mA   			 |   			  			 |   		
|   			 Gate Charge (Qg) (Max) @ Vgs   			 |   			  			 2.5 nC @ 10 V   			 |   			  			 |   		
|   			 Vgs (Max)   			 |   			  			 ±20V   			 |   			  			 |   		
|   			 Input Capacitance (Ciss) (Max) @ Vds   			 |   			  			 79 pF @ 25 V   			 |   			  			 |   		
|   			 FET Feature   			 |   			  			 -   			 |   			  			 |   		
|   			 Power Dissipation (Max)   			 |   			  			 360mW (Ta)   			 |   			  			 |   		
|   			 Operating Temperature   			 |   			  			 -55°C ~ 150°C (TJ)   			 |   			  			 |   		
|   			 Mounting Type   			 |   			  			 |   		|
|   			 Supplier Device Package   			 |   			  			 SOT-23-3   			 |   			  			 |   		
|   			 Package / Case   			 |   			
NDS0610 Power MOSFET from ON Semiconductor
Features:
  - N-channel enhancement mode
  - Low on-resistance
  - Low gate charge
  - Avalanche energy rated
  - Fully characterized avalanche voltage and current
  - 100% avalanche tested
  - Fast switching
  - Low gate input resistance
  - Low thermal resistance
Specifications:
  - Drain-Source Voltage (Vds): 60V
  - Drain-Source Breakdown Voltage (Vbr): 67V
  - Drain Current (ID): 8.5A
  - Drain-Source On-Resistance (Rds): <0.062Ω
  - Gate-Source Voltage (Vgs): ±20V
  - Gate Threshold Voltage (Vth): 2.2V
  - Power Dissipation (Pd): 11.25W
  - Operating Temperature: -55°C to 175°C
  - Mounting Type: Surface Mount
  - Package/Case: TO-252-3

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                        NDS0610 MOSFET Power Electronics High Performance Efficient Reliable Power Management Solutions Images |