BSC009NE2LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 25V Package 8-PowerTDFN

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Shenzhen Sai Collie Technology Co., Ltd.

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Name: BSC009NE2LSATMA1 MOSFET Power Electronics NChannel OptiMOSTM PowerMOSFET 25V Package 8PowerTDFN
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : BSC009NE2LSATMA1

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 25 V

Current - Continuous Drain (Id) @ 25°C : 41A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 0.9mOhm @ 30A, 10V

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	126 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5800 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-7
Package / Case	8-PowerTDFN

BSC009NE2LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 25V Package 8-PowerTDFN Images